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IRFR9110

MOSFET P-Chan 100V 3.1 Amp

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SeekIC No. : 00158846 Detail

IRFR9110: MOSFET P-Chan 100V 3.1 Amp

IRFR9110 Data Sheet

floor Price/Ceiling Price

US $ .84~.87 / Piece | Get Latest Price
Part Number:
IRFR9110
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~2260
  • 2260~3000
  • 3000~6000
  • Unit Price
  • $.87
  • $.85
  • $.84
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.1 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 1.2 Ohms
Continuous Drain Current : 3.1 A


Features:

• 3.1A, 100V
•rDS(ON) = 1.200Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards"


Specifications

                                                                                   IRFR9110, IRFU9110 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . VDSS                -100               V
Drain to Gate Voltage. . . . . . . .  . . . . . . . . . .VDGR                -100               V
Gate to Source Voltage . . . . . . .  . . . . . . . . . VGS                  ±20               V
Continuous Drain Current  . . . . .  . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . .IDM                     3.1              A
Refer to Peak Current Curv
Single Pulse Avalanche Rating . . . . . . . . . . . .EAS Refer to UIS Curve
Power Dissipation  . . . . . . . . . . . . . . . . . . . . .PD                       25             W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . .     0.2             W/
Operating and Storage Temperature . . . . . . .TJ, TSTG             -55 to 150   
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL                       300             
Package Body for 10s, See Techbrief 334 . . . Tpkg                    260           





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