IRFR9024NPBF

MOSFET

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IRFR9024NPBF Picture
SeekIC No. : 00150032 Detail

IRFR9024NPBF: MOSFET

floor Price/Ceiling Price

US $ .25~.76 / Piece | Get Latest Price
Part Number:
IRFR9024NPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.76
  • $.44
  • $.27
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 11 A
Mounting Style : SMD/SMT Package / Case : DPAK
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : - 55 V


Description

The IRFR9024NPBF is a kind of HEXFET P-channel power MOSFET which provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. It is available in the I-Pak package which is lead free.

There are some features of the IRFR9024NPBF as follows. (1) ultra low on-resistance; (2) surface mount; (3) advanced process technology; (4) fast switching; (5) fully avalanche rated.

The following is about its absolute maximum ratings of the IRFR9024NPBF. (1): the maximum continuous drain current (ID) is -11 A when TC is 25 and is -8 A when TC is 100 ; (2): the maximum pulsed drain current (IDM) is -44 A; (3): power dissipation (PD) is 38 W when TC is 25; (4): gate-to-source voltage (VGS) is ±20 V; (5): the maximum avalanche current is -6.6 A; (6): the operating and storage temperature is from -55 to 150 ; (7): soldering temperature for 10 seconds is 300 . Then is about its electrical characters at Tj is 25 . (1):  gate threshold voltage is from -2.0 V to -4.0 V at VDS is VGS and ID is -250 A; (2): the typical input capacitance is 350 pF and is 170 pF for the output capacitance and is 92 pF for the reverse transfer capacitance when VGS is 0,VDS is -25 V and f is 1.0 MHz; (3): the typical turn-on delay time is 13 ns,the fall time is 37 ns,the rise time is 55 ns and the turn-off delay time is 23 ns at VDD is -28 V,ID is -7.2 A and RG is 24 .




Parameters:

Technical/Catalog InformationIRFR9024NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs175 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max38W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFR9024NPBF
IRFR9024NPBF



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