IRFR9014

MOSFET P-Chan 60V 5.1 Amp

product image

IRFR9014 Picture
SeekIC No. : 00151314 Detail

IRFR9014: MOSFET P-Chan 60V 5.1 Amp

floor Price/Ceiling Price

US $ .95~1.43 / Piece | Get Latest Price
Part Number:
IRFR9014
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.43
  • $1.16
  • $1.07
  • $.95
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 0.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.5 Ohms
Continuous Drain Current : 5.1 A


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9014/SiHFR9014)
• Straight Lead (IRFU9014/SiHFU9014)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available





Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 60
± 20
V
Continuous Drain Current VGS at 5.0V TC = 25
TC = 100
ID

IDM
- 5.1
- 3.2
- 20
A
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)





TC = 25 °C
TA = 25 °C


for 10 s

EAS
IAR
EAR
PD
PD
dV/dt
TJ, Tstg
0.20
0.020
140
- 5.1
2.5
25
2.5
- 4.5
- 55 to + 150
260d
W/°C
mJ
A
mJ
W
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 6.3 mH, RG = 25 , IAS = - 5.1 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply





Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK of the IRFR9014 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.






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