MOSFET P-Chan 60V 5.1 Amp
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 5.1 A | ||
Resistance Drain-Source RDS (on) : | 0.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
PARAMETER |
SYMBOL |
LIMIT |
UNIT | ||
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
- 60 ± 20 |
V | ||
Continuous Drain Current | VGS at 5.0V | TC = 25 TC = 100 |
ID IDM |
- 5.1 - 3.2 - 20 |
A |
Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) |
TC = 25 °C TA = 25 °C for 10 s |
EAS IAR EAR PD PD dV/dt TJ, Tstg |
0.20 0.020 140 - 5.1 2.5 25 2.5 - 4.5 - 55 to + 150 260d |
W/°C mJ A mJ W W V/ns °C |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK of the IRFR9014 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.