MOSFET P-CH 55V 18A DPAK
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
Current - Collector (Ic) (Max): | - | FET Feature: | Standard | ||
Continuous Drain Current : | 15 A | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 18A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 9.6A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 32nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 650pF @ 25V | ||
Power - Max: | 57W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |
Technical/Catalog Information | IRFR5505TRL |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 9.6A, 10V |
Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
Power - Max | 57W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 32nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFR5505TRL IRFR5505TRL |