MOSFET P-CH 55V 18A DPAK
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Gain : | 19.5 dB | ||
Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 18A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 9.6A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 32nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 650pF @ 25V | ||
Power - Max: | 57W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |