MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 205 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Reel |
Technical/Catalog Information | IRFR5410TRPBF |
Vendor | International Rectifier (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 13A |
Rds On (Max) @ Id, Vgs | 205 mOhm @ 7.8A, 10V |
Input Capacitance (Ciss) @ Vds | 760pF @ 25V |
Power - Max | 66W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 58nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR5410TRPBF IRFR5410TRPBF IRFR5410PBFCT ND IRFR5410PBFCTND IRFR5410PBFCT |