Configuration
: Single
Mounting Style
: SMD/SMT
Package / Case
: DPAK
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 13 A
Drain-Source Breakdown Voltage
: - 100 V
Resistance Drain-Source RDS (on)
: 205 mOhms
Features: SpecificationsDescription IRFR5410PbF and IRFU5410PbF have many features: 1.adavanced process technology; 2. ultra low on-resistance; 3.P-channel; 4.surface mount(IRFR5410PbF); 5. fully avalanche rated; 6.straight lead(IRFU5410); 7. fast swithing; 8.lead-free.
fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely on-resistance per silicon area. this benefit, combined with the fast swithing speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an extremely effcient and reliable device for use in a wide varity of applications. the D-pak is designed for surface mounting using vapor phase , infrared, or wave soldering techniques. the atraight lead versionis for through-hole mounting applications. power disspation levels up to 1.5Watts are possible in typical surface mount applications.
Here are some absolute maximum ratings of IRFR5410PbF and IRFU5410PbF: 1. when TA=25C, continuous drain current is -13.0A; 2.when TA=100C, continuous drain current is -8.2A; 3. pulsed drain current is -52A; 4. when TC=25C, power disspation is 66W; 5.linear derating factor is 0.53W/C; 6. gate-to-source voltage is -20Vand +20V; 7.peak diode recovery is -5.0; 7. junction and storage temperature ranges from -55 to +150C; 8.sigle pulse avalanche energy is 194mJ; 9. repetitive avalanche energy is 6.3mJ.
If you want to know more about IRFR5410PbF and IRFU5410PbF, please pay attention to our websites!
Parameters: | Technical/Catalog Information | IRFR5410PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 13A |
| Rds On (Max) @ Id, Vgs | 205 mOhm @ 7.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 760pF @ 25V |
| Power - Max | 66W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 58nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR5410PBF
IRFR5410PBF
|
IRFR5410PBF Data Sheet
