Features: Advanced Process TechnologyUltra Low On-Resistance175 Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 35 A ID @ TC =100 Continuous ...
IRFR540Z: Features: Advanced Process TechnologyUltra Low On-Resistance175 Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Parameter |
Max. |
Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
35 |
A |
ID @ TC =100 | Continuous Drain Current, VGS @ 10V (Package Limited) |
25 | |
IDM | Pulsed Drain Current |
140 | |
PD @TC= 25 | Power Dissipation |
91 |
W |
Linear Derating Factor |
0.61 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS (Thermally limited) | Single Pulse Avalanche Energy |
39 |
mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
75 | |
IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR | Repetitive Avalanche Energy |
mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Reflow Soldering Temperature, for 10 seconds |
300 | ||
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
Specifically designed for Automotive applications of the IRFR540Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.