Features: •Advanced Process Technology•Ultra Low On-Resistance•175°C Operating Temperature•Fast Switching•Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ...
IRFR48Z: Features: •Advanced Process Technology•Ultra Low On-Resistance•175°C Operating Temperature•Fast Switching•Repetitive Avalanche Allowed up to TjmaxSpecifications ...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 62 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 44 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
42 | |
IDM | Pulsed Drain Current | 250 | |
PD @TC = 25°C | Power Dissipation | 91 | W |
Linear Derating Factor | 0.61 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS (Thermally limited) | Single Pulse Avalanche Energy | 74 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
110 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) | ||
Mounting torque, 6-32 or M3 screw. | 10 lbf`in (1.1N`m) |
Specifically designed for Automotive applications of the IRFR48Z,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.