IRFR430A, US $ 1.13-1.17 , Vishay/Siliconix, IRFR430A DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158762 Detail

IRFR430A: MOSFET N-Chan 500V 5.0 Amp

IRFR430A Data Sheet

US $ 1.13~1.17 / Piece | Get Latest Price

Part Number:: IRFR430A
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~2250
2250~3000
3000~6000

Unit Price
$1.17
$1.14
$1.13

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	5 A
Resistance Drain-Source RDS (on) :	1.7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1.7 Ohms

Application

· Switch Mode Power Supply (SMPS)
· Uninterruptible Power Supply
· High speed power switching

Specifications

	Parameter	Max.	Units
I_D @ T_C= 25°C	Continuous Drain Current, V_GS@ 10V	5.0	A
I_D @ T_C= 100°C	Continuous Drain Current, V_GS@ 10V	3.2
I_DM	Pulsed Drain Current	20
P_D @T_C = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.91	W/°C
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulse Avalanche Energy	130	mJ
I_AR	Avalanche Current	5.0	A
E_AR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	3.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55to+150
	Soldering Temperature, for 10 seconds	300(1.6mm from case )

Thermal Resistance

	Parameter	Typ.	Max.	Units
R_JC	Junction-to-Case	-	1.1	°C/W
R_CS	Case-to-Sink, Flat, Greased Surface	0.50	-
R_JA	Junction-to-Ambient	-	62

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IRFR430A

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