MOSFET N-Chan 500V 2.4 Amp
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.4 A | ||
Resistance Drain-Source RDS (on) : | 3 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
The IRFR420PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRFR420PbF has seven features.The first one is that it would have dynamic dv/dt rating.The second one is that it would be repetitive avalanche rated.The third one is that it would have surface mount.The fourth one is that it would have fast switching.The fifth one is that it would have ease of paralleling.The sixth one is that it would be available in type & reel.The last one is that it would be lead free.That are all the features.
Some absolute maximum ratings of IRFR420PbF have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 2.4A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 1.5A.The third one is about its pulse drain current which would be 8.0A.The fourth one is about its power dissipation which would be 42W.The fifth one is about its linear derating factor which would be 0.33W/°C.The sixth one is about its gate-to source voltage which would be +/-20V.The seventh one is about its signal pulse avalanche energy which would be 400mJ.The eighth one is about its avalabche current which would be 2.4A.The ninth one is about its repetitive avalanche energy which would be 4.2mJ.The next one is about its peak diode recovery dv/dt which would be 3.5 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The next one is about its soldering temperature, for 10 sec which would be 260°C.
And also there are some electrical characteristics @ Tj=25°C (unless otherwise specified) about IRFR420PbF.The first one is about its drain to source breakdown voltage which would be min 500V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.59V/°C.The third one is about its static drain to source on resistance which would be max 3.0 with condition of Vgs=10V, Id=1.4A.And so on.For more information please contact us.