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IRFR420BTM: MOSFET 500V N-Channel B-FET

IRFR420BTM Data Sheet

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Part Number:: IRFR420BTM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/28

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	2.3 A
Resistance Drain-Source RDS (on) :	2.6 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 2.6 Ohms

Parameters:

Technical/Catalog Information	IRFR420BTM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	2.6 Ohm @ 1.15A, 10V
Input Capacitance (Ciss) @ Vds	610pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR420BTM IRFR420BTM

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IRFR420BTM

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