Position: Home  > All Categories> Integrated Circuits (ICs) > IRFR410B

IRFR410B

Features: • 0.9A, 500V, RDS(on) = 10 @VGS = 10 V• Low gate charge ( typical 5.1 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityPinoutSpecifications Symbol Parameter IRFR410B / IRFU410B Units VDSS Dra...

product image

IRFR410B Picture
See larger image
SeekIC No. : 004377381 Detail

IRFR410B: Features: • 0.9A, 500V, RDS(on) = 10 @VGS = 10 V• Low gate charge ( typical 5.1 nC)• Low Crss ( typical 3.6 pF)• Fast switching• 100% avalanche tested• Improved d...

IRFR410B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFR410B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 0.9A, 500V, RDS(on) = 10 @VGS = 10 V
• Low gate charge ( typical 5.1 nC)
• Low Crss ( typical 3.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Pinout

Connection Diagram


Specifications

Symbol Parameter IRFR410B / IRFU410B Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		 0.9 A
0.57 A
IDM Drain Current - Pulsed 3.0 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 40 mJ
IAR Avalanche Current 0.9 A
EAR Repetitive Avalanche Energy 2.0 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C)
             - Derate above 25°C		 20 W
0.16 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices of the IRFR410B are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Filters
PICO2205A
PICO2204A
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Integrated Circuits (ICs)
TA8435H
1MB12-140
View more