IRFR4105PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 45 m Ohms


Features:

·Ultra Low On-Resistance
·Surface Mount (IRFR4105)
·Straight Lead (IRFU4105)
·Fast Switching
·Fully Avalanche Rated
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ VGS=-12V,TC=25	Continuous Drain Curren	27	A
ID @ VGS=-12V,TC=100	Continuous Drain Curren	19
IDM	Pulsed Drain Current	100
PD@ TC= 25	Power Dissipatio	68	W
	Linear Derating Factor	0.45	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	65	mJ
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	6.8	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/nS
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	g

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK of the IRFR4105PbF is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through- hole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parameters:

Technical/Catalog Information	IRFR4105PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	45 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	68W
Packaging	Tube
Gate Charge (Qg) @ Vgs	34nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR4105PBF IRFR4105PBF