MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 93 A | ||
Resistance Drain-Source RDS (on) : | 7.8 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
VDS | Drain-Source Voltage |
20 |
V |
VGS | Gate-to-Source Voltage |
±20 |
A |
ID @ Tc = 25 | Continuous Drain Current, VGS |
93 | |
ID @ Tc = 100 | Continuous Drain Current, VGS |
66 | |
IDM | Pulsed Drain Current |
370 | |
PD @Tc= 25 | Maximum Power Dissipation |
79 |
W |
PD @Tc= 100 | Maximum Power Dissipation |
39 |
W |
Linear Derating Factor |
0.53 |
W | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Technical/Catalog Information | IRFR3711ZPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 93A |
Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 2160pF @ 10V |
Power - Max | 79W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 27nC @ 4.5V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR3711ZPBF IRFR3711ZPBF |