MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 110 A | ||
Resistance Drain-Source RDS (on) : | 8.5 mOhms | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter | Max. | Units | |
VDS VGS |
Drain-to-Source Voltage Gate-to-Source Voltage |
20 ±20 |
V |
ID @ TA = 25 ID @ TA = 100 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
100 69 440 |
A |
PD @ TA = 25 PD @ TC = 25 |
Continuous Drain Current, VGS @ 10V Maximum Power Dissipation |
2.5 120 |
W |
TJ, TSTG |
Linear Derating Factor Junction and Storage Temperature Range |
0.96 -55 to +150 |
W/ |
Technical/Catalog Information | IRFR3711PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 100A |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 2980pF @ 10V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 44nC @ 4.5V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR3711PBF IRFR3711PBF |