IRFR3710ZPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 56 A
Resistance Drain-Source RDS (on) : 18 m Ohms


Features:

  Advanced Process Technology
 Ultra Low On-Resistance
  175Operating Temperature
  Fast Switching
  Repetitive Avalanche Allowed up to Tjmax
 Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	56	A
ID @ TC =100	Continuous Drain Current, VGS @ 10V	39
ID @ TC = 25	Continuous Drain Current,VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	220
PD @TC= 25	Power Dissipation	140	W
	Linear Derating Factor	0.95	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	150	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	200
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Reflow Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRFR3710ZPbF are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFR3710ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	18 mOhm @ 33A. 10V
Input Capacitance (Ciss) @ Vds	2930pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR3710ZPBF IRFR3710ZPBF