MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 56 A |
Resistance Drain-Source RDS (on) : | 12.5 mOhms | Mounting Style : | SMD/SMT |
Package / Case : | DPAK |
Parameter | Max. | Units | |
VDS | Drain-to-Source Voltage | 30 | V |
ID @ TC = 25 | Gate-to-Source Voltage | ± 20 | |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 56 | A |
IDM | Continuous Drain Current, VGS @ 10V | 39 | |
PD @TC = 25 | Pulsed Drain Current | 220 | |
PD @TC = 100 | Maximum Power Dissipation | 50 | W |
Maximum Power Dissipation | 25 | ||
TJ TSTG | Linear Derating Factor | 0.33 | W/ |
Operating Junction and Storage Temperature Range |
-55 to + 175 | ||
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Technical/Catalog Information | IRFR3707ZCPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 56A |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1150pF @ 15V |
Power - Max | 50W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR3707ZCPBF IRFR3707ZCPBF |