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IRFR3706PBF

MOSFET

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SeekIC No. : 00156657 Detail

IRFR3706PBF: MOSFET

IRFR3706PBF Data Sheet

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US $ .32~.32 / Piece | Get Latest Price
Part Number:
IRFR3706PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~4110
  • Unit Price
  • $.32
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 11 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Gate-Source Breakdown Voltage : 12 V
Packaging : Tube
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 11 mOhms


Application

·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
·High Frequency Buck Converters for Computer Processor Power
·Lead-Free

·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
·High Frequency Buck Converters for Computer Processor Power
·Lead-Free




Specifications

Symbol Parameter Max. Units
VDS Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage ±12 V
ID @ TA=25 Continuous Drain Current, VGS @ 10V 75 A
ID @ TC=100 Continuous Drain Current, VGS @ 10V 53 A
IDM Pulsed Drain Current 280 A
PD @ TC=25 Maximum Power Dissipation 88 W
PD @ TC=100 Maximum Power Dissipation 44 W
Linear Derating Factor 0.59 W/
Tj,TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to +175


Symbol Parameter Max. Units
VDS Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage ±12 V
ID @ TA=25 Continuous Drain Current, VGS @ 10V 75 A
ID @ TC=100 Continuous Drain Current, VGS @ 10V 53 A
IDM Pulsed Drain Current 280 A
PD @ TC=25 Maximum Power Dissipation 88 W
PD @ TC=100 Maximum Power Dissipation 44 W
Linear Derating Factor 0.59 W/
Tj,TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to +175







Parameters:

Technical/Catalog InformationIRFR3706PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs9 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2410pF @ 10V
Power - Max88W
PackagingTube
Gate Charge (Qg) @ Vgs35nC @ 10V
Package / CaseDPak,SC-63,TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFR3706PBF
IRFR3706PBF



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