IRFR3706CPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Power - Max: 88W
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 2410pF @ 10V


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power
· Lead-Free


Specifications

	Parameter	Max.	Unit
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±12	V
ID @ TC= 25	Continuous Drain Current,VGS @ 10V	75	A
ID @ TC= 100	Continuous Drain Current,VGS @ 10V	53	A
IDM @ TC = 25°C	Repetitive Peak Current	280	A
PD @TC= 25	Power Dissipation	88	W
PD @TC= 100	Power Dissipation	44	W
	Linear Derating Factor	0.59	W/
TJ,TSTG	Junction and Storage Temperature Range	-55 to + 175