MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 11.4 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
VDS | Drain-to-Source Voltage |
20 |
V |
VGS | Gate-to-Source Voltage |
±20 | |
PD @ TC = 25 | Continuous Drain Current, VGS @ 10V |
60 |
A |
PD @ TC = 100 | Continuous Drain Current, VGS @ 10V |
42 | |
IDM | Pulsed Drain Current |
240 | |
PD @ TC = 25 | Maximum Power Dissipation |
48 |
W |
PD @ TC = 100 | Maximum Power Dissipation |
24 | |
Linear Derating Factor |
0.32 |
W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400s; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.
Technical/Catalog Information | IRFR3704ZPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 60A |
Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1190pF @ 10V |
Power - Max | 48W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR3704ZPBF IRFR3704ZPBF |