IRFR3704Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 60A
Power - Max: 48W
Packaging: Tube
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Input Capacitance (Ciss) @ Vds: 1190pF @ 10V


Application

·High Frequency Synchronous Buck Converters for Computer Processor Power
·High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	60	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	42
IDM	Pulsed Drain Current	240
PD @TC = 25°C	Maximum Power Dissipation	48	W
PD @TA= 25°C	Maximum Power Dissipation	24
	Linear Derating Factor	0.32	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)