IRFR3505PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 13 m Ohms
Continuous Drain Current : 71 A


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V(Silicon Limited)	71	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V(See Fig.9)	49
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package limited)	30
IDM	Pulsed Drain Current	280
PD @ TC = 25	Max. Power Dissipation	140	W
	Linear Derating Factor	0.92	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	210	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	410
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	4.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature of the IRFR3505PbF, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The D-Pak of the IRFR3505PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parameters:

Technical/Catalog Information	IRFR3505PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	71A
Rds On (Max) @ Id, Vgs	13 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	2030pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	93nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR3505PBF IRFR3505PBF