FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Vgs(th) (Max) @ Id: 4V @ 50µA
Input Capacitance (Ciss) @ Vds: 1510pF @ 25V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
Power - Max: 90W
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TjmaxSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
77 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
54 |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V (Package Limited) |
42 |
| IDM |
Pulsed Drain Current |
310 |
| PD @TC = 25°C |
Power Dissipation |
90 |
W |
|
Linear Derating Factor |
0.60 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS (Thermally limited) |
Single Pulse Avalanche Energy |
77 |
mJ |
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
110 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
|
Mounting torque, 6-32 or M3 screw. |
10 lbf`in (1.1N`m) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design of the IRFR3504Z are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFR3504Z Data Sheet
