Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Package / Case
: DPAK
Drain-Source Breakdown Voltage
: 40 V
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 87 A
Resistance Drain-Source RDS (on)
: 9.2 m Ohms
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Specifications
| |
Parameter |
Max. |
Units |
ID@ TC = 25°C
|
Continuous Drain Current, VGS @ 10V (Silicon limited) |
87 |
A |
| ID@ TC = 100°C |
Continuous Drain Current, VGS@ 10V (See Fig.9) |
61 |
| ID@ TC = 25°C |
Continuous Drain Current, VGS@ 10V (Package limited) |
30 |
| IDM |
Pulsed Drain Current |
350 |
| PD @TC = 25°C |
Power Dissipation |
140 |
W |
| |
Linear Derating Factor |
0.92 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
240 |
mJ |
EAS(tested)
|
Single Pulse Avalanche Energy Tested Value |
480 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR
|
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addi tional features of this product of the IRFR3504PbF are a 175°C junction operatin temperature, fast switching speed and improved repetitiv avalanche rating. These features combine to make this desig an extremely efficient and reliable device for use in Automotiv applications and a wide variety of other applications.
The D-Pak of the IRFR3504PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parameters: | Technical/Catalog Information | IRFR3504PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 9.2 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 71nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR3504PBF
IRFR3504PBF
|
IRFR3504PBF Data Sheet
