IRFR3412PBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 140W
Gate Charge (Qg) @ Vgs: 89nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 48A
Input Capacitance (Ciss) @ Vds: 3430pF @ 25V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V


Application

·Switch Mode Power Supply (SMPS)
·Motor Drive
·Bridge Converters
·All Zero Voltage Switching
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TA=25	Continuous Drain Current, VGS @ 10V	170	A
ID @ TC=70	Continuous Drain Current, VGS @ 10V	120	A
IDM	Pulsed Drain Current	850	A
PD @ TA=25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
dv/dt	Peak Diode Recovery dv/dt	6.4	V/ns
Tj	Operating Junction and	-55 to +175
TSTG	Storage Temperature Range Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf?in (1.1N?m)

Parameters:

Technical/Catalog Information	IRFR3412PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	25 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds	3430pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	89nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR3412PBF IRFR3412PBF