Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Package / Case
: DPAK
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 32 A
Resistance Drain-Source RDS (on)
: 44 m Ohms
Specifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
32 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
23 |
| IDM |
Pulsed Drain Current |
110 |
| PD @TC = 25°C |
Power Dissipation |
130 |
W |
|
Linear Derating Factor |
0.83 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| IAR |
Avalanche Current |
16 |
A |
| EAR |
Repetitive Avalanche Energy |
13 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
7.0 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
DescriptionAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs of the IRFR3411PbF are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak of the IRFR3411PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parameters: | Technical/Catalog Information | IRFR3411PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 32A |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 1960pF @ 25V |
| Power - Max | 130W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 71nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR3411PBF
IRFR3411PBF
|
IRFR3411PBF Data Sheet
