Features: · Advanced Process Technology· Ultra Low On-Resistance· Dynamic dv/dt Rating· 175°C Operating Temperature· Fast Switching· Fully Avalanche RatedSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 32 A ID @ TC = 100°C Continu...
IRFR3411: Features: · Advanced Process Technology· Ultra Low On-Resistance· Dynamic dv/dt Rating· 175°C Operating Temperature· Fast Switching· Fully Avalanche RatedSpecifications Parameter Max. ...
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
32 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
23 | |
IDM | Pulsed Drain Current |
110 | |
PD @TC = 25°C | Power Dissipation |
130 |
W
|
Linear Derating Factor |
0.83 |
W/°C | |
VGS | Gate-to-Source Voltage |
±20 |
V |
IAR | Avalanche Current |
16 |
A |
EAR | Repetitive Avalanche Energy |
13 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
7.0 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+175 |
°C |
Soldering Temperature, for 10 seconds |
300(1.6mm from case ) |
Thermal Resistance
Parameter |
Typ. |
Max. |
Units | |
RJC | Junction-to-Case |
- |
1.2 |
°C/W |
RJA | Junction-to-Ambient (PCB mount) * |
- |
50 | |
RJA | Junction-to-Ambient |
- |
110 |
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak of the IRFR3411 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead, I-Pak, version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.