IRFR320

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 1.8 Ohms
Drain-Source Breakdown Voltage : 400 V
Continuous Drain Current : 3.1 A


Features:

• 3.1A, 400V
• r_DS(ON) = 1.800
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) V_DS ...................................400 V
Drain to Gate Voltage (R_GS = 20k) (Note 1)V_DGR ...............400 V
Continuous Drain Current  I_D .................................................3.1A
T_C = 100 I_D .........................................................................2.0A
Pulsed Drain Current (Note 3)  I_DM ........................................12 A
Gate to Source Voltage V_GS................................................ ±20 V
Maximum Power Dissipation P_D ............................................50 W
Linear Derating Factor 0.4 .....................................................W/
Single Pulse Avalanche Energy Rating (Note 4)E_AS ............190 mJ
Operating and Storage Temperature  T_J, T_STG ..........-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s T_L ..................300
Package Body for 10s, See Techbrief 334 T_pkg ...................260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRFR320 are designed for applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRFR320.