IRFR3103

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25° C: 1.7A
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 170pF @ 25V
Packaging: Tube
Manufacturer: International Rectifier


Parameters:

Technical/Catalog Information	IRFR3103
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	1.7A
Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	170pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	12nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFR3103 IRFR3103