IRFR2607ZPbF

MOSFET N-CH 75V 42A DPAK

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SeekIC No. : 004377353 Detail

IRFR2607ZPbF: MOSFET N-CH 75V 42A DPAK

floor Price/Ceiling Price

US $ .32~.61 / Piece | Get Latest Price
Part Number:
IRFR2607ZPbF
Mfg:
International Rectifier
Supply Ability:
5000

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  • Processing time
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Upload time: 2025/3/13

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Product Details

Description



Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free



Specifications

Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current VGS@ 10V (Silicon Limited)
45
A
ID @ TC = 100
Continuous Drain Current, VGS@10V
32
ID @ TC = 25
Continuous Drain Current VGS@ 10V (Package Limited)
42
IDM
Pulsed Drain Current
180
PD @ TC = 25
Power Dissipation
110
W
Linear Derating Factor
0.72
W/
VGS
Gate-to-Source Voltage
±20
V
EAS (Thermally limited)
Single Pulse Avalanche Energy
96
mJ
EAS (Tested)
Single Pulse Avalanche Energy Tested Value
96
IAR
Avalanche Current
See Fig.12a,12b,15,16
A
EAR
Repetitive Avalanche Energy
mJ
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw
10 lbfin (1.1Nm)





Description

Specifically  designed for  Automotive applications , this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRFR2607ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Parameters:

Technical/Catalog InformationIRFR2607ZPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs22 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1440pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs51nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFR2607ZPBF
IRFR2607ZPBF



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