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IRFR2605

HEX/MOS N-CH 55V 19A D-PAK

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SeekIC No. : 004377352 Detail

IRFR2605: HEX/MOS N-CH 55V 19A D-PAK

IRFR2605 Data Sheet

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Part Number:
IRFR2605
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
19
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
12
IDM Pulsed Drain Current
76
PD @TC = 25°C Power Dissipation
50
W
PD @TC = 25°C Power Dissipation (PCB Mount)**
3.1
  Linear Derating Factor
0.40
W/°C
  Linear Derating Factor (PCB Mount)**
0.025
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
100
mJ
IAR Avalanche Current
12
A
EAR Repetitive Avalanche Energy
5.0
mJ
dv/dt Peak Diode Recovery dv/dt
4.5
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55to+175
°C
  Soldering Temperature, for 10 seconds
300(1.6mm from case )
VESD Human Body Model, 100pF, 1.5K
2000
V
Thermal Resistance
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
2.5
°C/W
RJA Junction-to-Ambient (PCB mount) **
-
40
RJA Junction-to-Ambient
-
62
** When mounted on 1" square PCB (FR-4 or G-10 Material).
     For recommended footprint and soldering techniques refer to application note #AN-994.


Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device of the IRFR2605 design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications.

The D-PAK of the IRFR2605 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




Parameters:

Technical/Catalog InformationIRFR2605
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs85 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 420pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFR2605
IRFR2605



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