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IRFR2407

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 IDM Pulsed Drain Current 170 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS ...

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SeekIC No. : 004377350 Detail

IRFR2407: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 IDM Pulsed Drain Curre...

IRFR2407 Data Sheet

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Part Number:
IRFR2407
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter

Max.

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29
IDM Pulsed Drain Current 170
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy

 11

mJ

dv/dt Peak Diode Recovery dv/dt

 5.0

 V/ns

TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf`in (1.1N`m)



Description

Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs of the IRFR2407 are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of the IRFR2407 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




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