IRFR2405PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 56 A
Resistance Drain-Source RDS (on) : 16 m Ohms


Features:

· Surface Mount (IRFR2405)
· Straight Lead (IRFU2405)
· Advanced Process Technology
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	56	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	40
IDM	Pulsed Drain Current	220
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.71	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	130	mJ
IAR	Avalanche Current	34	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Seventh Generation HEXFET^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs of the IRFR2405PbF are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of the IRFR2405PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parameters:

Technical/Catalog Information	IRFR2405PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	56A
Rds On (Max) @ Id, Vgs	16 mOhm @ 34A, 10V
Input Capacitance (Ciss) @ Vds	2430pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR2405PBF IRFR2405PBF