IRFR2307Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Packaging: Tube
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 75nC @ 10V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Power - Max: 110W
Vgs(th) (Max) @ Id: 4V @ 100µA
Input Capacitance (Ciss) @ Vds: 2190pF @ 25V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V


Features:

•Advanced Process Technology
•Ultra Low On-Resistance
•175°C Operating Temperature
•Fast Switching
•Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	53	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	38
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	210
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.70	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	100	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	140
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications,this HEXFET^® Power MOSFET of IRFR2307Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRFR2307Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.