IRFR224

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 3.8 A
Resistance Drain-Source RDS (on) : 1.1 Ohms


Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR224/SiHFR224)
• Straight Lead (IRFU224/SiHFU224)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available


Specifications

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			VDS	250	V
Gate-Source Voltage			VGS	± 20
Continuous Drain Current	VGS at 10 V	TC = 25 °C	ID	3.8	A
		TC = 100 °C		2.4
Pulsed Drain Currenta			IDM	15
Linear Derating Factor				0.33	W/°C
Linear Derating Factor (PCB Mount)e				0.020
Single Pulse Avalanche Energyb			EAS	130	mJ
Repetitive Avalanche Currenta			IAR	3.8	A
Repetitive Avalanche Energya			EAR	4.2	mJ
Maximum Power Dissipation (PCB Mount)e		TA = 25 °C	PD	2.5	W
Maximum Power Dissipation		TC = 25 °C		42	W
Peak Diode Recovery dV/dtc			dV/dt	4.8	V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs of IRFR224  form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave solderig techniques. The straight lead version (IRFU/SiHFU series) of IRFR224 is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.