IRFR220,118

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 4.8A
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Power - Max: 42W
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Input Capacitance (Ciss) @ Vds: 280pF @ 25V


Parameters:

Technical/Catalog Information	IRFR220,118
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	4.8A
Rds On (Max) @ Id, Vgs	800 mOhm @ 2.9A, 10V
Input Capacitance (Ciss) @ Vds	280pF @ 25V
Power - Max	42W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	568; SOT428; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR220,118 IRFR220,118