MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 5 A | ||
Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 5.0 | A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 3.5 | |
IDM | Pulsed Drain Current | 20 | |
PD @TC = 25 | Power Dissipation | 43 | W |
Linear Derating Factor |
0.71 |
W/ | |
VGS | Diode Maximum Forward Current | ±20 | V |
dv/dt | Peak Diode Recovery dv/dt | 7.5 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRFR220NPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.9A, 10V |
Input Capacitance (Ciss) @ Vds | 300pF @ 25V |
Power - Max | 43W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR220NPBF IRFR220NPBF |