MOSFET N-CH 200V 5A DPAK
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 5.0 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 3.5 | |
IDM | Pulsed Drain Current | 20 | |
PD @TC = 25°C | Power Dissipation | 43 | W |
Linear Derating Factor | 0.71 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
dv/dt | Peak Diode Recovery dv/dt | 7.5 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Technical/Catalog Information | IRFR220N |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.9A, 10V |
Input Capacitance (Ciss) @ Vds | 300pF @ 25V |
Power - Max | 43W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFR220N IRFR220N |