IRFR18N15D

MOSFET N-CH 150V 18A DPAK

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SeekIC No. : 003432993 Detail

IRFR18N15D: MOSFET N-CH 150V 18A DPAK

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Part Number:
IRFR18N15D
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/10

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 150V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 18A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) @ Vgs: 43nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 900pF @ 25V
Power - Max: 110W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 43nC @ 10V
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 110W
Input Capacitance (Ciss) @ Vds: 900pF @ 25V
Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V


Application

·High frequency DC-DC converters


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13
IDM Pulsed Drain Current 72
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±30 V
dv/dt Peak Diode Recovery dv/dt 3.3 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)



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