MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 14 A | ||
Resistance Drain-Source RDS (on) : | 180 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 14 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 9.8 | |
IDM | Pulsed Drain Current | 56 | |
PD @TC = 25°C | Power Dissipation | 86 | W |
Linear Derating Factor | 0.57 | W/ | |
VGS | Gate-to-Source Voltage | ±30 | V |
dv/dt | Peak Diode Recovery dv/dt | 3.8 | V/ns |
TJ, TSTG | Junction and Storage Temperature Range | -55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRFR13N15DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 8.3A, 10V |
Input Capacitance (Ciss) @ Vds | 620pF @ 25V |
Power - Max | 86W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 29nC @ 10V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR13N15DPBF IRFR13N15DPBF |