MOSFET N-CH 250V 14A DPAK
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 250V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 14A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 260 mOhm @ 8.4A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 5V @ 250µA | Gate Charge (Qg) @ Vgs: | 35nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 810pF @ 25V | ||
Power - Max: | 144W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | D-Pak |
Technical/Catalog Information | IRFR12N25DPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 8.4A, 10V |
Input Capacitance (Ciss) @ Vds | 810pF @ 25V |
Power - Max | 144W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 35nC @ 10V |
Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR12N25DPBF IRFR12N25DPBF |