Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Package / Case
: DPAK
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 8.7 A
Resistance Drain-Source RDS (on)
: 190 mOhms
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free
Specifications
|
|
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current VGS @ 10V |
8.7 |
A |
|
ID @ TC =100 |
Continuous Drain Current VGS @ 10V |
6.7 |
|
IDM |
Pulsed Drain Current |
35 |
|
PD @ TC = 25 |
Max. Power Dissipation |
35 |
W |
|
|
Linear Derating actor |
0.23 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS (Thermally limited) |
Single Pulse Avalanche Energy |
18 |
mJ |
|
EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
20 |
mJ |
|
IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
|
EAR |
Repetitive Avalanche Energy |
|
mJ |
|
TJ |
Operating Junction |
-55 to 175 |
|
|
TSTG |
Storage Temperature Range |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting Torque, 6-32 or M3 screw |
10lb`in (1.1N`m) |
|
DescriptionSpecifically designed for Automotive applications of the IRFR120ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRFR120ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 8.7A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 5.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 310pF @ 25V |
| Power - Max | 35W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 10nC @ 10V |
| Package / Case | DPak,SC-63,TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFR120ZPBF
IRFR120ZPBF
|
IRFR120ZPBF Data Sheet
