IRFR120NTRPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 9.1 A
Resistance Drain-Source RDS (on) : 210 mOhms


Pinout




Description

The IRFR120NTRPBF is designed as one kind of HEXFET Power MOSFET device that has some points of features:(1)surface mount (IRFR120N); (2)advanced process technology; (3)fast switching; (4)fully avalanche rated.

The absolute maximum ratings of the IRFR120NTRPBF can be summarized as:(1)Continuous Drain Current, VGS @ 10V TC = 25°C: 9.4 A;(2)Continuous Drain Current, VGS @ 10V TC = 100°C: 6.6 A;(3)Pulsed Drain Current IDM: 38 A;(4)Power Dissipation: 48 W;(5)Linear Derating Factor: 0.32 W/°C;(6)Gate-to-Source Voltage: ±20 V;(7)Single Pulse Avalanche Energy: 91 mJ;(8)Avalanche Current: 5.7 A;(9)Repetitive Avalanche Energy: 4.8 mJ;(10)Peak Diode Recovery dv/dt: 5.0 V/ns;(11)Operating Junction and Storage Temperature Range: -55 to +175 ;(12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) . If you want to know more information about the IRFR120NTRPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	IRFR120NTRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	9.4A
Rds On (Max) @ Id, Vgs	210 mOhm @ 5.6A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	48W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR120NTRPBF IRFR120NTRPBF IRFR120NPBFCT ND IRFR120NPBFCTND IRFR120NPBFCT