IRFR1205PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : DPAK
Packaging : Tube
Continuous Drain Current : 37 A
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 27 m Ohms


Features:






Specifications






Description

      The IRFR1205PbF is designed as HEXFET power MOSFET.It would provide the designers with an extremely efficient for use in a wide variety of applications.
      The IRFR1205PbF  has five features.The first one is that it would have ultra low on-resistance.The second one is that it would have surface mount.The next one is that it would have fast switching.The next one is that it would be fully avalanche rated.The last one is that it would be lead-free.That are all the features.
      Some absolute maximum ratings of IRFR1205PbF have been concluded into several points as follow.The first one is about its continuous drain current @Tc=25°C which would be 44A.The second one is about its continuous drain current @Tc=100°C which would be 31A.The next one is about its pulse drain current which would be 160A. The next one is about its power dissipation which would be 107W @Tc=25°C.The next one is about its linear derating factor which would be 0.71W/°C.The next one is about its gate to source voltage which would be +/- 20V.The next one is about its single pulse avalanche energy which would be 210mJ.The next one is about its avalanche current which would be 25A.The next one is about its repititive avalanche energy which would be 11mJ.The next one is about its peak diode recovery dv/dt which would be 5.0V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The last one is solering temperature, for 10 seconds which would be 300°C.And so on.
      Also there are some electrical characteristics @ Tj=25°C unless otherwise specified about IRFR1205PbF, The first one is about its drain to source breakdown voltage which would be min 55V with condition of Vgs=0V, Id=250uA. The second one is about its breakdown voltage temp. coefficient which would be typ 0.055V/°C.The next one is about its gate threshold voltage which would be min 2.0V and max 4.0V with condition of Vds=Vgs, Id=250uA.And so on.For more information please contact us.

Parameters:

Technical/Catalog Information	IRFR1205PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	44A
Rds On (Max) @ Id, Vgs	27 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	2840pF @ 25V
Power - Max	140W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	DPak,SC-63,TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFR1205PBF IRFR1205PBF