IRFR110

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.54 Ohms
Continuous Drain Current : 4.3 A


Features:

• 4.7A, 100V
• r_DS(ON) = 0.540
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1)V_DS ..................................100 V
Drain to Gate Voltage (Note 1)V_DGR ...................................100 V
Continuous Drain Current ID ...............................................4.7 A
TC = 100 I_D ......................................................................3.3 A
Pulsed Drain Current (Note 4) I_DM .......................................17 A
Gate to Source Voltage   V_GS ............................................±20 V
Maximum Power Dissipation   P_D .........................................30 W
Linear Derating Factor ................................................... 0.2 W/
Single Pulse Avalanche Rating (Note 3) E_AS ........................19 mj
Operating and Storage Temperature T_J, T_STG......... -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s T_L ..................300
Package Body for 10s, See Techbrief 334 Tpkg .................. 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and  guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced
power MOSFETs of the IRFR110 are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits.

Formerly developmental type IRFR110.