MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V |
| Continuous Drain Current : | 79 A | Resistance Drain-Source RDS (on) : | 8.4 mOhms |
| Configuration : | Single | Maximum Operating Temperature : | + 175 C |
| Mounting Style : | SMD/SMT | Package / Case : | DPAK |
| Packaging : | Reel |