MOSFET
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Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Im...
Application Surface Mount (IRFR120N)Straight Lead (IRFU120N)Advanced Process Technology Fast Switc...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 79 A |
Mounting Style : | SMD/SMT | Package / Case : | DPAK |
Packaging : | Tube |
Parameter |
Maximum |
Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
79 |
A |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
56 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Wire Bond Limited) |
56 | |
IDM | Pulsed Drain Current |
315 | |
PD @TC= 25 | Maximum Power Dissipation |
110 |
W |
Linear Derating Factor |
0.76 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
dv/dt | Peak Diode Recovery |
21 |
mJ |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds (1.6mm from case) |
300 |
Technical/Catalog Information | IRFR1018EPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 79A |
Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
Input Capacitance (Ciss) @ Vds | 2290pF @ 50V |
Power - Max | 110W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 69nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFR1018EPBF IRFR1018EPBF |