Features: ·Low Gate Charge Qg Reduces Drive Required·Improved Gate Resistance for Faster Switching·Fully Characterized Capacitance and Avalanche Voltage and Current·Lowest Conduction Loss in Package Outline·Effective COSS specified (See AN 1001)Application·Switch Mode Power Supply (SMPS)·Uninterru...
IRFPS59N60C: Features: ·Low Gate Charge Qg Reduces Drive Required·Improved Gate Resistance for Faster Switching·Fully Characterized Capacitance and Avalanche Voltage and Current·Lowest Conduction Loss in Package...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V |
59 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V |
37 | |
IDM | Pulsed Drain Current |
240 | |
PD @TC = 25°C | Power Dissipation |
390 |
W |
Linear Derating Factor |
3.1 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
dv/dt | Peak Diode Recovery dv/dt |
TBD |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 150 -55 to + 150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Recommended clip force |
20 |
N |