IRFP044N

MOSFET N-CH 55V 53A TO-247AC

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IRFP044N Picture
SeekIC No. : 003432880 Detail

IRFP044N: MOSFET N-CH 55V 53A TO-247AC

floor Price/Ceiling Price

Part Number:
IRFP044N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 2.1 A Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 53A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 61nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1500pF @ 25V
Power - Max: 120W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247AC    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Gate Charge (Qg) @ Vgs: 61nC @ 10V
Drain to Source Voltage (Vdss): 55V
Power - Max: 120W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 53A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds: 1500pF @ 25V


Features:

· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated



Specifications

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
53
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
37
IDM Pulsed Drain Current
180
PD @TC = 25°C Power Dissipation
120
W
  Linear Derating Factor
0.77
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
230
mJ
IAR Avalanche Current
28
A
EAR Repetitive Avalanche Energy
12
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)



Description

Fifth Generation HEXFETs IRFP044N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package IRFP044N is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mountinghole.




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